advanced technical information maximum ratings all ratings: t c = 25c unless otherwise specified. unit volts amps volts watts w/c c amps mj unit volts amps ohms a na volts min typ max 500 56 0.085 250 1000 100 24 apt50m85 500 56 224 30 40 625 5.0 -55 to 150 300 56 50 3000 APT50M85B2VFR apt50m85lvfr 500v 56a 0.085 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com fredfet t-max ? usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 g d s to-264 050-5914 rev- 11-99 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? identical specifications: t-max? or to-264 package lower leakage faster switching fast recovery body diode 100% avalanche tested b2vfr lvfr
advanced technical information dynamic characteristics apt50m85 b2vfr - lvfr source-drain diode ratings and characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time (i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge (i s = -i d [cont.], di / dt = 100a/s) peak recovery current (i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25 c r g = 0.6 min typ max 8630 1160 440 360 57 151 16 18 60 6 unit pf nc ns min typ max 56 224 1.3 5 t j = 25 c 270 t j = 125 c 540 t j = 25 c 1.8 t j = 125 c 6.2 t j = 25 c 16 t j = 125 c 29 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25 c, l = 1.91mh, r g = 25 , peak i l = 56a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s -i d [cont.], di / dt = 100a/s, t j 150 c, r g = 2.0 , v r = 200v. apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.20 40 unit c/w characteristic junction to case junction to ambient dimensions in millimeters and (inches) dimensions in millimeters and (inches) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector emitter gate collector emitter gate collector collector 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 2-plcs. to-264 (l) package outline t-max ? (b2) package outline these dimensions are equal to the to-247 without the mounting hole. apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 050-5914 rev- 11-99
|
